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Title: An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

Abstract

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico 87185-1085 (United States)
Publication Date:
OSTI Identifier:
22594428
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONS; EMISSION; GALLIUM NITRIDES; HEIGHT; SCHOTTKY BARRIER DIODES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS

Citation Formats

Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J.. An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor. United States: N. p., 2016. Web. doi:10.1063/1.4959179.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., & Kaplar, Robert J.. An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor. United States. doi:10.1063/1.4959179.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J.. Mon . "An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor". United States. doi:10.1063/1.4959179.
@article{osti_22594428,
title = {An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor},
author = {Baca, Albert G. and Armstrong, Andrew M. and Allerman, Andrew A. and Douglas, Erica A. and Sanchez, Carlos A. and King, Michael P. and Coltrin, Michael E. and Fortune, Torben R. and Kaplar, Robert J.},
abstractNote = {An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.},
doi = {10.1063/1.4959179},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Mon Jul 18 00:00:00 EDT 2016},
month = {Mon Jul 18 00:00:00 EDT 2016}
}