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Title: High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperature range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-9892J
Journal ID: ISSN 2162-8769; 656987
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Ultra-wide-bandgap; aluminum gallium nitride, power electronics; high electron mobility transistor; HEMT
OSTI Identifier:
1429842

Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Klein, Brianna A., Douglas, Erica A., Sanchez, Carlos A., and Fortune, Torben R.. High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70 N High Electron Mobility Transistors. United States: N. p., Web. doi:10.1149/2.0041711jss.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Klein, Brianna A., Douglas, Erica A., Sanchez, Carlos A., & Fortune, Torben R.. High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70 N High Electron Mobility Transistors. United States. doi:10.1149/2.0041711jss.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Klein, Brianna A., Douglas, Erica A., Sanchez, Carlos A., and Fortune, Torben R.. 2017. "High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70 N High Electron Mobility Transistors". United States. doi:10.1149/2.0041711jss. https://www.osti.gov/servlets/purl/1429842.
@article{osti_1429842,
title = {High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70 N High Electron Mobility Transistors},
author = {Baca, Albert G. and Armstrong, Andrew M. and Allerman, Andrew A. and Klein, Brianna A. and Douglas, Erica A. and Sanchez, Carlos A. and Fortune, Torben R.},
abstractNote = {AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel AlxGa1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large Ion/Ioff current ratio, greater than 108 was demonstrated over the entire temperature range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.},
doi = {10.1149/2.0041711jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 11,
volume = 6,
place = {United States},
year = {2017},
month = {8}
}