skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on March 19, 2020

Title: Enhancement-mode Al 0.85Ga 0.15N/Al 0.7Ga 0.3N high electron mobility transistor with fluorine treatment

Abstract

Enhancement-mode Al 0.7Ga 0.3N-channel high electron mobility transistors (HEMTs) were achieved here through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (V TH) relative to depletion-mode devices by +5.6 V to V TH = +0.5 V. Accounting for the threshold voltage shift (ΔV TH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10 -3 mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔV TH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1507744
Alternate Identifier(s):
OSTI ID: 1501722
Report Number(s):
SAND2019-2413J
Journal ID: ISSN 0003-6951; 673155
Grant/Contract Number:  
NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; transconductance; electric measurements; secondary ion mass spectroscopy; semiconductors; two-dimensional electron gas; field effect transistors; electric currents; electrical properties and parameters

Citation Formats

Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., and Baca, Albert G. Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment. United States: N. p., 2019. Web. doi:10.1063/1.5064543.
Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., & Baca, Albert G. Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment. United States. doi:10.1063/1.5064543.
Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., and Baca, Albert G. Tue . "Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment". United States. doi:10.1063/1.5064543.
@article{osti_1507744,
title = {Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment},
author = {Klein, Brianna A. and Douglas, Erica A. and Armstrong, Andrew M. and Allerman, Andrew A. and Abate, Vincent M. and Fortune, Torben R. and Baca, Albert G.},
abstractNote = {Enhancement-mode Al0.7Ga0.3N-channel high electron mobility transistors (HEMTs) were achieved here through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (VTH) relative to depletion-mode devices by +5.6 V to VTH = +0.5 V. Accounting for the threshold voltage shift (ΔVTH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10-3 mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔVTH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.},
doi = {10.1063/1.5064543},
journal = {Applied Physics Letters},
number = 11,
volume = 114,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 19, 2020
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics
journal, March 2010

  • Kanamura, M.; Ohki, T.; Kikkawa, T.
  • IEEE Electron Device Letters, Vol. 31, Issue 3, p. 189-191
  • DOI: 10.1109/LED.2009.2039026