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Title: Time constant of defect relaxation in ion-irradiated 3 C-SiC

Abstract

Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.

Authors:
 [1];  [2];  [3];  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Department of Nuclear Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Texas A & M Univ., College Station, TX (United States). Department of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE)
OSTI Identifier:
1408991
Alternate Identifier(s):
OSTI ID: 1226744
Report Number(s):
LLNL-JRNL-668477
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States: N. p., 2015. Web. doi:10.1063/1.4921471.
Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States. doi:10.1063/1.4921471.
Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Tue . "Time constant of defect relaxation in ion-irradiated 3C-SiC". United States. doi:10.1063/1.4921471. https://www.osti.gov/servlets/purl/1408991.
@article{osti_1408991,
title = {Time constant of defect relaxation in ion-irradiated 3C-SiC},
author = {Wallace, J. B. and Bayu Aji, L. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.},
doi = {10.1063/1.4921471},
journal = {Applied Physics Letters},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}

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Cited by: 13 works
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