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Title: Time constant of defect relaxation in ion-irradiated 3C-SiC

Abstract

Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.

Authors:
 [1];  [2]; ;  [1];  [3]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  2. (United States)
  3. Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843 (United States)
Publication Date:
OSTI Identifier:
22402456
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ARGON IONS; CRYSTAL LATTICES; ION BEAMS; IRRADIATION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; PULSES; RELAXATION TIME; SILICON CARBIDES

Citation Formats

Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., and Shao, L. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States: N. p., 2015. Web. doi:10.1063/1.4921471.
Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., & Shao, L. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States. doi:10.1063/1.4921471.
Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., and Shao, L. Mon . "Time constant of defect relaxation in ion-irradiated 3C-SiC". United States. doi:10.1063/1.4921471.
@article{osti_22402456,
title = {Time constant of defect relaxation in ion-irradiated 3C-SiC},
author = {Wallace, J. B. and Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843 and Bayu Aji, L. B. and Kucheyev, S. O. and Shao, L.},
abstractNote = {Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.},
doi = {10.1063/1.4921471},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}