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Title: Dose-rate dependence of damage buildup in 3 C -SiC

Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [1]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA
  2. Lawrence Livermore National Laboratory, Livermore, California 94550, USA, Department of Nuclear Engineering, Texas A&,M University, College Station, Texas 77843, USA
Publication Date:
Grant/Contract Number:
AC52-07NA27344
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1364450

Bayu Aji, L. B., Li, T. T., Wallace, J. B., and Kucheyev, S. O.. Dose-rate dependence of damage buildup in 3 C -SiC. United States: N. p., Web. doi:10.1063/1.4986631.
Bayu Aji, L. B., Li, T. T., Wallace, J. B., & Kucheyev, S. O.. Dose-rate dependence of damage buildup in 3 C -SiC. United States. doi:10.1063/1.4986631.
Bayu Aji, L. B., Li, T. T., Wallace, J. B., and Kucheyev, S. O.. 2017. "Dose-rate dependence of damage buildup in 3 C -SiC". United States. doi:10.1063/1.4986631.
@article{osti_1364450,
title = {Dose-rate dependence of damage buildup in 3 C -SiC},
author = {Bayu Aji, L. B. and Li, T. T. and Wallace, J. B. and Kucheyev, S. O.},
abstractNote = {},
doi = {10.1063/1.4986631},
journal = {Journal of Applied Physics},
number = 23,
volume = 121,
place = {United States},
year = {2017},
month = {6}
}

Works referenced in this record: