Optimized capping layers for EUV multilayers

Bajt, Sasa; Folta, James A; Spiller, Eberhard A

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Title: Optimized capping layers for EUV multilayers

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Abstract

A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

Inventors:

Bajt, Sasa ^[1]; Folta, James A ^[1]; Spiller, Eberhard A ^[1]

Livermore, CA

Issue Date:: Tue Aug 24 00:00:00 EDT 2004

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 921905

Patent Number(s):: 6780496

Application Number:: 10/066,108

Assignee:: EUV LLC (Santa Clara, CA)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B5/0825 - {the reflecting layers comprising dielectric materials only}
G02B5/0891 - {Ultraviolet [UV] mirrors

G - PHYSICS G21 - NUCLEAR PHYSICS G21K - TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR
G21K1/062 - {Devices having a multilayer structure}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12493 - Composite
Y10T428/12674 - Ge- or Si-base component
Y10T428/12729 - Group IIA metal-base component
Y10T428/12826 - Group VIB metal-base component
Y10T428/24975 - No layer or component greater than 5 mils thick
Y10T428/265 - 1 mil or less
Y10T428/30 - Self-sustaining carbon mass or layer with impregnant or other layer
Y10T428/31678 - Of metal

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Bajt, Sasa, Folta, James A, and Spiller, Eberhard A. Optimized capping layers for EUV multilayers.  United States: N. p., 2004. 
        Web.

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                    Bajt, Sasa, Folta, James A, & Spiller, Eberhard A. Optimized capping layers for EUV multilayers.  United States.

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                    Bajt, Sasa, Folta, James A, and Spiller, Eberhard A. Tue .  
        "Optimized capping layers for EUV multilayers".  United States.  https://www.osti.gov/servlets/purl/921905.

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@article{osti_921905,

  title        = {Optimized capping layers for EUV multilayers},

  author       = {Bajt, Sasa and Folta, James A and Spiller, Eberhard A},

  abstractNote = {A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Aug 24 00:00:00 EDT 2004},

  month        = {Tue Aug 24 00:00:00 EDT 2004}

}

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