Etched-multilayer phase shifting masks for EUV lithography

Chapman, Henry N.; Taylor, John S.

Title: Etched-multilayer phase shifting masks for EUV lithography

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Abstract

A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

Inventors:: Chapman, Henry N.; Taylor, John S.

Issue Date:: 2005-04-05

Research Org.:: EUV Limited Liability Corporation, Santa Clara, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175305

Patent Number(s):: 6875543

Application Number:: 10/256,377

Assignee:: EUV Limited Liability Corporation (Santa Clara, CA)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F1/24 - Reflection masks

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F1/34 - Phase-edge PSM, e.g. chromeless PSM

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Chapman, Henry N., and Taylor, John S. Etched-multilayer phase shifting masks for EUV lithography.  United States: N. p., 2005. 
        Web.

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                    Chapman, Henry N., & Taylor, John S. Etched-multilayer phase shifting masks for EUV lithography.  United States.

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                    Chapman, Henry N., and Taylor, John S. Tue .  
        "Etched-multilayer phase shifting masks for EUV lithography".  United States.  https://www.osti.gov/servlets/purl/1175305.

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@article{osti_1175305,

  title        = {Etched-multilayer phase shifting masks for EUV lithography},

  author       = {Chapman, Henry N. and Taylor, John S.},

  abstractNote = {A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {4}

}

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