Method to repair localized amplitude defects in a EUV lithography mask blank
Abstract
A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
- Inventors:
- Issue Date:
- Research Org.:
- The EUV Limited Liability Corporation, Santa Clara, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175557
- Patent Number(s):
- 6967168
- Application Number:
- 09/896,722
- Assignee:
- The EUV Limited Liability Corporation (Santa Clara, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Chapman, Henry N. Method to repair localized amplitude defects in a EUV lithography mask blank. United States: N. p., 2005.
Web.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., & Chapman, Henry N. Method to repair localized amplitude defects in a EUV lithography mask blank. United States.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Chapman, Henry N. Tue .
"Method to repair localized amplitude defects in a EUV lithography mask blank". United States. https://www.osti.gov/servlets/purl/1175557.
@article{osti_1175557,
title = {Method to repair localized amplitude defects in a EUV lithography mask blank},
author = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B. and Chapman, Henry N.},
abstractNote = {A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {11}
}
Works referenced in this record:
Multiple-layer blank structure for phase-shifting mask fabrication
journal, January 1996
- Pierrat, Christophe
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, Issue 1