Method for the manufacture of phase shifting masks for EUV lithography

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

Title: Method for the manufacture of phase shifting masks for EUV lithography

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Abstract

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Inventors:: Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

Issue Date:: 2006-04-04

Research Org.:: EUV Limited Liability Corporation, Santa Clara, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175687

Patent Number(s):: 7022435

Application Number:: 10/256,454

Assignee:: EUV Limited Liability Corporation (Santa Clara, CA)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F1/30 - Alternating PSM, e.g. Levenson-Shibuya PSM
G03F1/24 - Reflection masks

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70283 - {Masks or their effects on the imaging process, e.g. Fourier masks, greyscale masks, holographic masks, phase shift masks, phasemasks, lenticular masks, multiple masks, tilted masks, tandem masks

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography.  United States: N. p., 2006. 
        Web.

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                    Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., & Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography.  United States.

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                    Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. Tue .  
        "Method for the manufacture of phase shifting masks for EUV lithography".  United States.  https://www.osti.gov/servlets/purl/1175687.

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@article{osti_1175687,

  title        = {Method for the manufacture of phase shifting masks for EUV lithography},

  author       = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B. and Barty, Anton},

  abstractNote = {A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {4}

}

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