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Title: Objective for EUV microscopy, EUV lithography, and x-ray imaging

Abstract

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

Inventors:
; ;
Issue Date:
Research Org.:
Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1250448
Patent Number(s):
9329487
Application Number:
14/465,404
Assignee:
Bitter; Manfred (Princeton, NJ)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC02-09CH11466
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Bitter, Manfred, Hill, Kenneth W., and Efthimion, Philip. Objective for EUV microscopy, EUV lithography, and x-ray imaging. United States: N. p., 2016. Web.
Bitter, Manfred, Hill, Kenneth W., & Efthimion, Philip. Objective for EUV microscopy, EUV lithography, and x-ray imaging. United States.
Bitter, Manfred, Hill, Kenneth W., and Efthimion, Philip. Tue . "Objective for EUV microscopy, EUV lithography, and x-ray imaging". United States. https://www.osti.gov/servlets/purl/1250448.
@article{osti_1250448,
title = {Objective for EUV microscopy, EUV lithography, and x-ray imaging},
author = {Bitter, Manfred and Hill, Kenneth W. and Efthimion, Philip},
abstractNote = {Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

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Works referenced in this record:

Schwarzschild objective for soft x-rays
journal, August 2000


Extremely fine-pitch printing with a 10X Schwarzschild optic at extreme-ultraviolet wavelengths
conference, August 2001


Multilayer roughness and image formation in the Schwarzschild objective
journal, September 1996


Analytical design method for a modified Schwarzschild optics
journal, January 2006


Monochromatic x-ray backlighting of wire-array z -pinch plasmas using spherically bent quartz crystals
journal, March 2003


Imaging X-ray crystal spectrometer for laser-produced plasmas
journal, April 2011


Monochromatic x-ray imaging with bent crystals for laser fusion research
journal, January 2001


Design and analysis of a Schwarzschild imaging multilayer x-ray microscope
journal, January 1990


Design and analysis of soft x-ray imaging microscopes
conference, January 1992


Optical Analysis of an Ultra-High Resolution Two-Mirror Soft X-Ray Microscope
journal, January 1995


Design Of An Imaging Microscope For Soft X-Ray Applications
conference, December 1988


Schwarzschild objective and similar two-mirror systems
conference, December 2012


Conventional and modified Schwarzschild objective for EUV lithography: design relations
journal, August 2006


A new scheme for stigmatic x-ray imaging with large magnification
journal, October 2012