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Title: Selective layer disordering in III-nitrides with a capping layer

Abstract

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1257205
Patent Number(s):
9368677
Application Number:
14/540,686
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Nov 13
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wierer, Jr., Jonathan J., and Allerman, Andrew A. Selective layer disordering in III-nitrides with a capping layer. United States: N. p., 2016. Web.
Wierer, Jr., Jonathan J., & Allerman, Andrew A. Selective layer disordering in III-nitrides with a capping layer. United States.
Wierer, Jr., Jonathan J., and Allerman, Andrew A. Tue . "Selective layer disordering in III-nitrides with a capping layer". United States. https://www.osti.gov/servlets/purl/1257205.
@article{osti_1257205,
title = {Selective layer disordering in III-nitrides with a capping layer},
author = {Wierer, Jr., Jonathan J. and Allerman, Andrew A.},
abstractNote = {Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

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Works referenced in this record:

Disorder of an AlAs‐GaAs superlattice by impurity diffusion
journal, May 1981


Impurity diffusion and layer interdiffusion in Al x Ga 1− x As‐GaAs heterostructures
journal, August 1988


Impurity‐induced layer disordering of high gap In y (Al x Ga 1− x ) 1− y P heterostructures
journal, April 1988


Impurity‐induced disordering of single well Al x Ga 1− x As‐GaAs quantum well heterostructures
journal, February 1984


Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
journal, January 1998


Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
journal, January 1998


Sub-picosecond all-optical gate utilizing aN intersubband transition
journal, January 2005


GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
journal, July 2003


Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm
journal, July 2000


Magnetic properties of manganese tartrate (abstract)
journal, April 1991