Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers
Abstract
The invention uses iridium and iridium compounds as a protective capping layer on multilayers having reflectivity in the deep ultra-violet to soft x-ray regime. The iridium compounds can be formed in one of two ways: by direct deposition of the iridium compound from a prepared target or by depositing a thin layer (e.g., 5-50 angstroms) of iridium directly onto an element. The deposition energy of the incoming iridium is sufficient to activate the formation of the desired iridium compound. The compounds of most interest are iridium silicide (IrSi.sub.x) and iridium molybdenide (IrMo.sub.x).
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174932
- Patent Number(s):
- 6759141
- Application Number:
- 10/137,065
- Assignee:
- University Of California, The Regents Of
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Prisbrey, Shon T. Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers. United States: N. p., 2004.
Web.
Prisbrey, Shon T. Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers. United States.
Prisbrey, Shon T. Tue .
"Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers". United States. https://www.osti.gov/servlets/purl/1174932.
@article{osti_1174932,
title = {Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers},
author = {Prisbrey, Shon T.},
abstractNote = {The invention uses iridium and iridium compounds as a protective capping layer on multilayers having reflectivity in the deep ultra-violet to soft x-ray regime. The iridium compounds can be formed in one of two ways: by direct deposition of the iridium compound from a prepared target or by depositing a thin layer (e.g., 5-50 angstroms) of iridium directly onto an element. The deposition energy of the incoming iridium is sufficient to activate the formation of the desired iridium compound. The compounds of most interest are iridium silicide (IrSi.sub.x) and iridium molybdenide (IrMo.sub.x).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}
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