Method for deposition of a conductor in integrated circuits
Abstract
A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 871129
- Patent Number(s):
- 5663098
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; deposition; conductor; integrated; circuits; described; fabricating; semiconductor; particularly; selective; substrate; employing; chemical; vapor; process; example; tungsten; selectively; deposited; silicon; onset; loss; selectivity; interrupted; unwanted; mask; layer; removed; halogen; etchant; thereafter; plurality; etch; cycles; carried; achieve; predetermined; thickness; predetermined thickness; chemical vapor; vapor deposition; silicon substrate; integrated circuits; integrated circuit; deposition process; mask layer; /438/
Citation Formats
Creighton, J Randall, Dominguez, Frank, Johnson, A Wayne, and Omstead, Thomas R. Method for deposition of a conductor in integrated circuits. United States: N. p., 1997.
Web.
Creighton, J Randall, Dominguez, Frank, Johnson, A Wayne, & Omstead, Thomas R. Method for deposition of a conductor in integrated circuits. United States.
Creighton, J Randall, Dominguez, Frank, Johnson, A Wayne, and Omstead, Thomas R. Wed .
"Method for deposition of a conductor in integrated circuits". United States. https://www.osti.gov/servlets/purl/871129.
@article{osti_871129,
title = {Method for deposition of a conductor in integrated circuits},
author = {Creighton, J Randall and Dominguez, Frank and Johnson, A Wayne and Omstead, Thomas R},
abstractNote = {A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}
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Works referenced in this record:
Selective Tungsten on Silicon by the Alternating Cyclic, AC, Hydrogen Reduction of WF 6
journal, February 1990
- Reisman, A.; Shin, D. R.; Jones, G. W.
- Journal of The Electrochemical Society, Vol. 137, Issue 2