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Title: Method of making thermally-isolated silicon-based integrated circuits

Abstract

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1409829
Patent Number(s):
9,824,932
Application Number:
15/234,932
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Aug 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., and Bauer, Todd. Method of making thermally-isolated silicon-based integrated circuits. United States: N. p., 2017. Web.
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Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., & Bauer, Todd. Method of making thermally-isolated silicon-based integrated circuits. United States.
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Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., and Bauer, Todd. Tue . "Method of making thermally-isolated silicon-based integrated circuits". United States. https://www.osti.gov/servlets/purl/1409829.
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@article{osti_1409829,
title = {Method of making thermally-isolated silicon-based integrated circuits},
author = {Wojciechowski, Kenneth and Olsson, Roy and Clews, Peggy J. and Bauer, Todd},
abstractNote = {Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}
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Works referenced in this record:

CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
journal, September 2009

  • Gitelman, L.; Stolyarova, S.; Bar-Lev, S.
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 9, p. 1935-1942
  • DOI: 10.1109/TED.2009.2026523

Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
conference, June 2009

  • Wojciechowski, K. E.; Olsson, R. H.; Tuck, M. R.
  • Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • DOI: 10.1109/SENSOR.2009.5285626
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