Method of making thermally-isolated silicon-based integrated circuits

Title: Method of making thermally-isolated silicon-based integrated circuits

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Inventors:: Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

Issue Date:: 2017-11-21

OSTI Identifier:: 1409829

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A

Patent Number(s):: 9,824,932

Application Number:: 15/234,932

Contract Number:: AC04-94AL85000

Resource Relation:: Patent File Date: 2016 Aug 11

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING

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