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  • Method of making thermally-isolated silicon-based integrated circuits

Title: Method of making thermally-isolated silicon-based integrated circuits

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1409829
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
Patent Number(s):
9,824,932
Application Number:
15/234,932
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2016 Aug 11
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING
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Works referenced in this record:

CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
journal, September 2009
  • Gitelman, L.; Stolyarova, S.; Bar-Lev, S.
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 9, p. 1935-1942
  • DOI: 10.1109/TED.2009.2026523
Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
conference, June 2009
  • Wojciechowski, K. E.; Olsson, R. H.; Tuck, M. R.
  • Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • DOI: 10.1109/SENSOR.2009.5285626

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