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Title: Method of making thermally-isolated silicon-based integrated circuits

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1409829
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
Patent Number(s):
9,824,932
Application Number:
15/234,932
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2016 Aug 11
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Other works cited in this record:

Method of fabricating micromachined structures and devices formed therefrom
patent, October 2002

IC-compatible MEMS structure
patent, April 2009

Infrared imaging device and method of manufacturing the same
patent, November 2012

Ovenized microelectromechanical system (MEMS) resonator
patent, March 2014

Micro Electronic Device And Method For Fabricating Micro Electromechanical System Resonator Thereof
patent-application, February 2011

Uncooled Infrared Detector And Methods For Manufacturing The Same
patent-application, October 2011

Method Of Forming An Electromechanical Transducer Device
patent-application, March 2012

Integrated Circuit With MEMS Element And Manufacturing Method Thereof
patent-application, February 2014

CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
journal, September 2009
  • Gitelman, L.; Stolyarova, S.; Bar-Lev, S.
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 9, p. 1935-1942
  • DOI: 10.1109/TED.2009.2026523

Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
conference, June 2009
  • Wojciechowski, K. E.; Olsson, R. H.; Tuck, M. R.
  • Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • DOI: 10.1109/SENSOR.2009.5285626

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