Process for preparing schottky diode contacts with predetermined barrier heights
Abstract
A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.
- Inventors:
-
- Middleton, WI
- Portland, OR
- Madison, WI
- Issue Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- OSTI Identifier:
- 870414
- Patent Number(s):
- 5516725
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG02-86ER45274
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; preparing; schottky; diode; contacts; predetermined; barrier; heights; provided; producing; preselected; height; phi; bn; substrate; preferably; n-gaas; metallic; contact; derived; starting; alloy; formula; sigma; delta; 1-x; moiety; consists; viii; metal; selected; consisting; nickel; cobalt; ruthenium; rhodium; indium; platinum; stoichiometric; coefficient; total; value; positive; ranges; capable; forming; phase; equilibrium; reciprocal; binary; mixture; ga-; al-alas-gaas; subclass; preliminarily; correlated; producable; therewith; diodes; sputtering; annealing; product; produced; according; produced according; viii metal; metal selected; schottky diode; barrier height; metallic contact; /438/
Citation Formats
Chang, Y Austin, Jan, Chia-Hong, and Chen, Chia-Ping. Process for preparing schottky diode contacts with predetermined barrier heights. United States: N. p., 1996.
Web.
Chang, Y Austin, Jan, Chia-Hong, & Chen, Chia-Ping. Process for preparing schottky diode contacts with predetermined barrier heights. United States.
Chang, Y Austin, Jan, Chia-Hong, and Chen, Chia-Ping. Mon .
"Process for preparing schottky diode contacts with predetermined barrier heights". United States. https://www.osti.gov/servlets/purl/870414.
@article{osti_870414,
title = {Process for preparing schottky diode contacts with predetermined barrier heights},
author = {Chang, Y Austin and Jan, Chia-Hong and Chen, Chia-Ping},
abstractNote = {A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
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