Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
Abstract
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
- Inventors:
-
- Yardley, PA
- Princeton, NJ
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, NJ (USA)
- OSTI Identifier:
- 863404
- Patent Number(s):
- 4163677
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EY-76-C-03-1286
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- schottky; barrier; amorphous; silicon; solar; cell; doped; region; adjacent; metal; incorporating; highly; p-type; hydrogenated; disposed; function; intrinsic; forms; surface; junction; layer; thickness; concentration; dopants; selected; ionized; found; increase; circuit; voltage; current; photovoltaic; device; adjacent metal; doped p-type; cell incorporating; circuit voltage; schottky barrier; silicon layer; amorphous silicon; solar cell; hydrogenated amorphous; photovoltaic device; silicon solar; highly doped; p-type region; p-type dopant; region adjacent; p-type dopants; type dopant; barrier amorphous; function metal; surface barrier; type dopants; intrinsic region; /136/257/
Citation Formats
Carlson, David E, and Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States: N. p., 1979.
Web.
Carlson, David E, & Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States.
Carlson, David E, and Wronski, Christopher R. Mon .
"Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier". United States. https://www.osti.gov/servlets/purl/863404.
@article{osti_863404,
title = {Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier},
author = {Carlson, David E and Wronski, Christopher R},
abstractNote = {A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}