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Title: Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Abstract

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Inventors:
 [1];  [2]
  1. Yardley, PA
  2. Princeton, NJ
Issue Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863404
Patent Number(s):
4163677
Assignee:
RCA Corporation (New York, NY)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
schottky; barrier; amorphous; silicon; solar; cell; doped; region; adjacent; metal; incorporating; highly; p-type; hydrogenated; disposed; function; intrinsic; forms; surface; junction; layer; thickness; concentration; dopants; selected; ionized; found; increase; circuit; voltage; current; photovoltaic; device; adjacent metal; doped p-type; cell incorporating; circuit voltage; schottky barrier; silicon layer; amorphous silicon; solar cell; hydrogenated amorphous; photovoltaic device; silicon solar; highly doped; p-type region; p-type dopant; region adjacent; p-type dopants; type dopant; barrier amorphous; function metal; surface barrier; type dopants; intrinsic region; /136/257/

Citation Formats

Carlson, David E, and Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States: N. p., 1979. Web.
Carlson, David E, & Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States.
Carlson, David E, and Wronski, Christopher R. Mon . "Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier". United States. https://www.osti.gov/servlets/purl/863404.
@article{osti_863404,
title = {Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier},
author = {Carlson, David E and Wronski, Christopher R},
abstractNote = {A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

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