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Title: Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

Abstract

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Inventors:
;
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1334629
Patent Number(s):
9,515,211
Application Number:
14/444,140
Assignee:
University of South Carolina (Columbia, SC) LANL
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE

Citation Formats

Mandal, Krishna C., and Terry, J. Russell. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer. United States: N. p., 2016. Web.
Mandal, Krishna C., & Terry, J. Russell. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer. United States.
Mandal, Krishna C., and Terry, J. Russell. Tue . "Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer". United States. https://www.osti.gov/servlets/purl/1334629.
@article{osti_1334629,
title = {Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer},
author = {Mandal, Krishna C. and Terry, J. Russell},
abstractNote = {A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {12}
}

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