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Title: Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

Abstract

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Inventors:
;
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1334629
Patent Number(s):
9515211
Application Number:
14/444,140
Assignee:
University of South Carolina (Columbia, SC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE

Citation Formats

Mandal, Krishna C., and Terry, J. Russell. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer. United States: N. p., 2016. Web.
Mandal, Krishna C., & Terry, J. Russell. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer. United States.
Mandal, Krishna C., and Terry, J. Russell. Tue . "Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer". United States. https://www.osti.gov/servlets/purl/1334629.
@article{osti_1334629,
title = {Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer},
author = {Mandal, Krishna C. and Terry, J. Russell},
abstractNote = {A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {12}
}

Works referenced in this record:

Plastic Mounting of Epitaxially Grown IV-VI Compound Semiconducting Films
patent, November 1973


SiC wafer, SiC semiconductor device, and production method of SiC wafer
patent, May 2004


High voltage, high temperature capacitor and interconnection structures
patent, December 2005