Schottky barrier MOSFET systems and fabrication thereof
Abstract
(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.
- Inventors:
-
- 10328 Pinehurst Ave., Omaha, NE 68124
- Issue Date:
- Research Org.:
- James D Welch
- OSTI Identifier:
- 871132
- Patent Number(s):
- 5663584
- Assignee:
- Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- FG47-93R701314
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- schottky; barrier; mosfet; systems; fabrication; device; systems-utilizing; source; drain; channel; region; junctions; disclosed; experimentally; derived; results; demonstrate; operation; fabricated; n-channel; p-channel; devices; single; operational; characteristics; similar; cmos; non-latching; src; reported; essentially; non-rectifying; barriers; structures; involving; highly; doped; intrinsic; semiconductor; allow; interconnection; electrical; accessing; regions; insulator; effected; leakage; current; geometries; procedures; taught; selective; formed; p-type; n-type; allows; realization; load; balanced; differential; inverting; non-inverting; operating; utilized; modulation; voltage; controled; switching; effecting; direction; rectification; barrier mosfet; electrical interconnection; single device; characteristics similar; operating characteristics; schottky barrier; highly doped; single devices; leakage current; rate operation; voltage control; devices formed; fabrication procedures; intrinsic semiconductor; schottky barriers; semiconductor allows; channel region; fabrication procedure; experimentally derived; operating characteristic; electrical interconnect; derived results; /257/
Citation Formats
Welch, James D. Schottky barrier MOSFET systems and fabrication thereof. United States: N. p., 1997.
Web.
Welch, James D. Schottky barrier MOSFET systems and fabrication thereof. United States.
Welch, James D. Wed .
"Schottky barrier MOSFET systems and fabrication thereof". United States. https://www.osti.gov/servlets/purl/871132.
@article{osti_871132,
title = {Schottky barrier MOSFET systems and fabrication thereof},
author = {Welch, James D},
abstractNote = {(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}
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