Tunnel barrier schottky
Abstract
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
- Inventors:
- Issue Date:
- Research Org.:
- HRL Laboratories, LLC, Malibu, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1422743
- Patent Number(s):
- 9899482
- Application Number:
- 15/093,710
- Assignee:
- HRL Laboratories, LLC (Malibu, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000450
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Apr 07
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Chu, Rongming, Cao, Yu, Li, Zijian, and Williams, Adam J. Tunnel barrier schottky. United States: N. p., 2018.
Web.
Chu, Rongming, Cao, Yu, Li, Zijian, & Williams, Adam J. Tunnel barrier schottky. United States.
Chu, Rongming, Cao, Yu, Li, Zijian, and Williams, Adam J. Tue .
"Tunnel barrier schottky". United States. https://www.osti.gov/servlets/purl/1422743.
@article{osti_1422743,
title = {Tunnel barrier schottky},
author = {Chu, Rongming and Cao, Yu and Li, Zijian and Williams, Adam J.},
abstractNote = {A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2018},
month = {Tue Feb 20 00:00:00 EST 2018}
}
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