Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors
Abstract
A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 868066
- Patent Number(s):
- 5065205
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- wavelength; inassb; strained-layer; superlattice; photoconductive; detectors; device; 12; radiation; including; active; semiconductor; region; extending; substrate; exposed; comprising; alternating; layers; inas; 1-x; sb; compounds; 75; pair; spaced; electrodes; provided; changes; spaced electrodes; strained-layer superlattice; region extending; wavelength radiation; alternating layers; active semiconductor; photoconductive detector; radiation including; layer superlattice; /257/
Citation Formats
Biefeld, Robert M, Dawson, L Ralph, Fritz, Ian J, Kurtz, Steven R, and Zipperian, Thomas E. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors. United States: N. p., 1991.
Web.
Biefeld, Robert M, Dawson, L Ralph, Fritz, Ian J, Kurtz, Steven R, & Zipperian, Thomas E. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors. United States.
Biefeld, Robert M, Dawson, L Ralph, Fritz, Ian J, Kurtz, Steven R, and Zipperian, Thomas E. Tue .
"Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors". United States. https://www.osti.gov/servlets/purl/868066.
@article{osti_868066,
title = {Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors},
author = {Biefeld, Robert M and Dawson, L Ralph and Fritz, Ian J and Kurtz, Steven R and Zipperian, Thomas E},
abstractNote = {A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}
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