InAsSb strained-layer superlattices for long wavelength detector applications

Conference · Sat Jan 01 00:00:00 EST 1983

OSTI ID:5505705

Osbourn, G C

InAsSb strained-layer superlattices have been proposed as III-V candidates for 8 to 12 ..mu..m applications. The wavelength response of certain InAsSb SLSs can be extended beyond 12 ..mu..m at 77/sup 0/K through the intentional use of layer strains, regardless of the conduction band offsets in this system. This material system offers the metallurgical and device processing advantages of III-V semiconductors. The InAsSb SLSs also offer reduced sensitivity to lateral compositional variation and reduced band to band tunneling compared to bulk Hg/sub 0/ /sub 795/Cd/sub 0/ /sub 205/Te.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5505705
• Report Number(s): SAND-83-2148C; CONF-8310188-1; ON: DE84001055
• Resource Relation: Conference: 5. molecular beam epitaxy workshop, Atlanta, GA, USA, 6 Oct 1983
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
36 MATERIALS SCIENCE
ANTIMONY ALLOYS
USES
INDIUM ALLOYS
INDIUM ARSENIDES
INFRARED RADIATION
DETECTION
SEMICONDUCTOR DETECTORS
LOW TEMPERATURE
SUPERLATTICES
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
INDIUM COMPOUNDS
MEASURING INSTRUMENTS
PNICTIDES
RADIATION DETECTORS
RADIATIONS
440300* - Miscellaneous Instruments- (-1989)
360600 - Other Materials