InAsSb strained-layer superlattices for long wavelength detector applications

Conference · Fri Dec 31 23:00:00 EST 1982

OSTI ID:5505705

Osbourn, G C

InAsSb strained-layer superlattices have been proposed as III-V candidates for 8 to 12 ..mu..m applications. The wavelength response of certain InAsSb SLSs can be extended beyond 12 ..mu..m at 77/sup 0/K through the intentional use of layer strains, regardless of the conduction band offsets in this system. This material system offers the metallurgical and device processing advantages of III-V semiconductors. The InAsSb SLSs also offer reduced sensitivity to lateral compositional variation and reduced band to band tunneling compared to bulk Hg/sub 0/ /sub 795/Cd/sub 0/ /sub 205/Te.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5505705
• Report Number(s): SAND-83-2148C; CONF-8310188-1; ON: DE84001055
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360600 -- Other Materials
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DETECTION
ELECTROMAGNETIC RADIATION
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LOW TEMPERATURE
MEASURING INSTRUMENTS
PNICTIDES
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SUPERLATTICES
USES