Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices

Journal Article · Mon Jul 11 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4958854· OSTI ID:22590561

Ariyawansa, Gamini; Reyner, Charles J.; Duran, Joshua M.; Reding, Joshua D.; Scheihing, John E. ^[1]; Steenbergen, Elizabeth H. ^[2]

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1. Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 (United States)
2. Air Force Research Laboratory, Kirtland Air Force Base, New Mexico 87117 (United States)

Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption properties compared to InAs/InAsSb SLSs. Utilizing In{sub 1-y}Ga{sub y}As/InAs{sub 0.65}Sb{sub 0.35} ternary SLSs (y = 0, 5, 10, and 20%) designed to have the same bandgap, a set of four unipolar detectors are investigated. These demonstrate an enhancement in the detector quantum efficiency due to the increased absorption coefficient. The detectors exhibit dark current performance within a factor of 10 of Rule 07 at temperatures above 120 K, and external quantum efficiencies in the 15%–25% range. This work demonstrates ternary SLSs are a potential absorber material for future high performance MWIR detectors.

• OSTI ID: 22590561
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CURRENTS
DESIGN
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
PERFORMANCE
POTENTIALS
QUANTUM EFFICIENCY
STRAINS
SUPERLATTICES