InAsSb strained-layer superlattices (SLSs) for long wavelength detector applications

Conference · Sat Dec 31 23:00:00 EST 1983

OSTI ID:6589227

Osbourn, G C; Zipperian, T E

InAsSb strained-layer superlattices (SLS's) are proposed as novel III-V semiconductor materials with the potential for long wavelength intrinsic detector applications. Theoretical studies indicate that the wavelength cutoff of InAs/sub 0/ /sub 4/Sb/sub 0/ /sub 6//InAs/sub 1-y/Sb/sub y/SLSs with y> 0.73 can be extended to 12 ..mu..m at 77K through the intentional use of layer strains. These new materials may avoid many of the growth and stability problems associated with HgCdTe and may lead to more reproducible and dependable long-wavelength ir arrays. This work builds upon successful SLS ir detector studies that have been performed in the InGaAs/GaAs material system.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6589227
• Report Number(s): SAND-84-0854C; CONF-840880-1; ON: DE84016111
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DETECTION
ELECTROMAGNETIC RADIATION
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
MEASURING INSTRUMENTS
PNICTIDES
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
STRAINS
SUPERLATTICES