InAsSb strained-layer superlattices for long wavelength detector applications

Journal Article · Sun Apr 01 04:00:00 EST 1984 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.582772· OSTI ID:6813947

Osbourn, G C

InAsSb strained-layer superlattices (SLS's) are proposed as novel III--V semiconductor materials with the potential for long wavelength intrinsic detector applications. Theoretical studies of the band gaps of various InAs/sub 0.4/Sb/sub 0.6//InAs/sub 1-x/Sb/sub x/ SLS's with x > 0.6 have been carried out. The results indicate that the wavelength response of various SLS's with x > or approx. = 0.73 can be extended to 12 ..mu..m at 77 K through the intentional use of layer strains. These new structures offer the metallurgical and processing advantages of III--V semiconductors for 12 ..mu..m detector applications. Further advantages include a weaker dependence of the SLS band gap on composition and reduced band-to-band tunneling in the SLS compared to bulk Hg/sub 0.8/Cd/sub 0.2/Te.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6813947
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 2:2; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ENERGY GAP
FEASIBILITY STUDIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
MEASURING INSTRUMENTS
PHOTOSENSITIVITY
PNICTIDES
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SENSITIVITY
SUPERLATTICES