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Title: Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]

Abstract

An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

Inventors:
Issue Date:
OSTI Identifier:
6853625
Application Number:
ON: DE84011294
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ANTIMONY ALLOYS; INDIUM ALLOYS; INDIUM ARSENIDES; INFRARED RADIATION; DETECTION; SEMICONDUCTOR DETECTORS; ELECTRO-OPTICAL EFFECTS; SUPERLATTICES; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; INDIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; RADIATION DETECTORS; RADIATIONS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

Citation Formats

Osbourn, G C. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]. United States: N. p., 1983. Web.
Osbourn, G C. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]. United States.
Osbourn, G C. Thu . "Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]". United States.
@article{osti_6853625,
title = {Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]},
author = {Osbourn, G C},
abstractNote = {An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {10}
}