Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]

Title: Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]

Full Record
Other Related Research

Abstract

An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

Inventors:: Osbourn, G C

Issue Date:: 1983-10-06

OSTI Identifier:: 6853625

Application Number:: ON: DE84011294

Assignee:: Dept. of Energy

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ANTIMONY ALLOYS; INDIUM ALLOYS; INDIUM ARSENIDES; INFRARED RADIATION; DETECTION; SEMICONDUCTOR DETECTORS; ELECTRO-OPTICAL EFFECTS; SUPERLATTICES; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; INDIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; RADIATION DETECTORS; RADIATIONS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

Citation Formats


                    Osbourn, G C. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/].  United States: N. p., 1983. 
        Web.

Copy to clipboard


                    Osbourn, G C. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/].  United States.

Copy to clipboard


                    Osbourn, G C. Thu .  
        "Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]".  United States.

Copy to clipboard


                    
@article{osti_6853625,

  title        = {Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]},

  author       = {Osbourn, G C},

  abstractNote = {An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1983},

  month        = {10}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

The growth of InAs{sub 1-x}Sb{sub x}/InAs strained-layer superlattices by metal-organic chemical vapor deposition

Conference Biefeld, R M; Baucom, K C; Kurtz, S R

InAs{sub 1-x}Sb{sub x}/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sb{sub x} were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0 {mu}m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Thesemore »« less
Full Text Available
An overview of the electronic properties of InAs sub 1-x Sb sub x strained-layer superlattices (0 le times le 1)

Conference Kurtz, S R; Biefeld, R M; Dawson, L R; ...

There have been few attempts to bandgap engineer'' In(AsSb) semiconductors although In(AsSb) alloys have the smallest bandgaps and effective masses among the III-V semiconductors. In(AsSb) may prove useful for high speed devices, and this system is an obvious starting point to extend the optical response of III-V semiconductors to longer wavelength for infrared detectors and lasers. In this paper we summarize studies of the electronic and optical properties of In(AsSb) strained-layer superlattices (SLSs) for a wide range of compositions. Previously, long wavelength infrared response was observed at low As content in these SLSs, and we concluded that a type 2more »« less
Microstructures of InAs{sub 1-x}Sb{sub x} (x = 0.07-0.14) alloys and strained-layer superlattices

Journal Article Follstaedt, D M; Biefeld, R M; Kurtz, S R; ... - Journal of Electronic Materials

Growth of InAs{sub 1-x}Sb{sub x} alloys by metalorganic chemical vapor deposition at 475{degree}C results in CuPt ordering even at Sb concentrations as low as x = 0.07-0.14. The two [BC111]TAN{sub B} variants are present, but each exists separately in 1-2 {mu}m regions. However, the ordering is incomplete: it occurs in platelet domains lying on habit planes tilted 30{degree} from (001) within a disordered matrix and is not continuous at the atomic scale within the domains. This ordering apparently explains the reduction in infrared emission energies relative to the bandgaps of bulk alloys. Similar ordering is found in an InAs{sub 0.91}Sb{submore »« less
DOI: 10.1007/BF02653330
Microstructures of InAs{sub 1{minus}x}Sb{sub x} (x = 0.07--0.14) alloys and strained-layer superlattices

Conference Follstaedt, D M; Biefeld, R M; Kurtz, S.R., Baucom, K.C.

Growth of InAs{sub l{minus}x},Sb{sub x} alloys by MOCVD at 475C results in CuPt ordering even at Sb concentrations as low as x = 0.07--0.14. The two {l_brace}111{r_brace}{sub B} variants are present, but each exists separately in 1--2 {mu}m regions. However, the ordering is incomplete: it occurs in platelet domains lying on {l_brace}111{r_brace} habit planes within a disordered matrix, and is not continuous at the atomic scale within the domains. This ordering apparently explains the reduction in infrared emission energies relative to the bandgaps of bulk alloys. Similar ordering is found in an InAs{sub 0.91}Sb{sub 0.09}/In{sub 0.87}Ga{sub 0.13}AS strained-layer superlattice withmore »« less
Full Text Available
Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Journal Article Kim, Honggyu [Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.]; Meng, Yifei [Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.] (ORCID:0000000342755025); Klem, John F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)]; ... - Journal of Applied Physics

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase inmore »« less
DOI: 10.1063/1.4993673

Full Text Available

Similar Records