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Title: Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

Abstract

A high gain photoconductive device for 8 to 12 {mu}m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs{sub 1-x}Sb{sub x} compounds having x {ge} 0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 {mu}m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes. 9 figs.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Org.:
DOE/DP
OSTI Identifier:
6721915
Patent Number(s):
PATENTS-US-A7350814
Application Number:
ON: DE90014581; PPN: US 7-350814
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent Application
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE; 42 ENGINEERING; PHOTOCONDUCTORS; DESIGN; ABSORPTION; ANTIMONY COMPLEXES; ARSENIC COMPLEXES; DOPED MATERIALS; ELECTRO-OPTICAL EFFECTS; GAIN; INDIUM COMPLEXES; INFRARED RADIATION; MECHANICAL PROPERTIES; PHOTODIODES; PHOTOLUMINESCENCE; RADIATION HARDENING; SEMICONDUCTOR DEVICES; SPECIFICATIONS; STABILITY; SUPERLATTICES; WAVELENGTHS; AMPLIFICATION; COMPLEXES; ELECTROMAGNETIC RADIATION; HARDENING; LUMINESCENCE; MATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DIODES; 440600* - Optical Instrumentation- (1990-); 360603 - Materials- Properties; 360602 - Other Materials- Structure & Phase Studies; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Biefeld, R M, Dawson, L R, Fritz, I J, Kurtz, S R, and Zipperian, T E. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors. United States: N. p., 1989. Web.
Biefeld, R M, Dawson, L R, Fritz, I J, Kurtz, S R, & Zipperian, T E. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors. United States.
Biefeld, R M, Dawson, L R, Fritz, I J, Kurtz, S R, and Zipperian, T E. 1989. "Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors". United States.
@article{osti_6721915,
title = {Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors},
author = {Biefeld, R M and Dawson, L R and Fritz, I J and Kurtz, S R and Zipperian, T E},
abstractNote = {A high gain photoconductive device for 8 to 12 {mu}m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs{sub 1-x}Sb{sub x} compounds having x {ge} 0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 {mu}m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes. 9 figs.},
doi = {},
url = {https://www.osti.gov/biblio/6721915}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 12 00:00:00 EDT 1989},
month = {Fri May 12 00:00:00 EDT 1989}
}