Title: Semiconductor structure and recess formation etch technique

Abstract

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Inventors:

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

Issue Date:

Tue Feb 14 00:00:00 EST 2017

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1343744

Patent Number(s):

9570600

Application Number:

14/442,546

Assignee:

Massachusetts Institute of Technology

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30621 - {Vapour phase etching}
H01L29/2003 - {Nitride compounds}
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/4175 - {for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole}
H01L29/41766 - {with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
H01L29/4236 - {within a trench, e.g. trench gate electrode, groove gate electrode}
H01L29/66462 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}

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DOE Contract Number:  

AR0000123

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Nov 15

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE