skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Patent ·
OSTI ID:1179228
; ; ;

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,029,239
Application Number:
14/067,433
OSTI ID:
1179228
Resource Relation:
Patent File Date: 2013 Oct 30
Country of Publication:
United States
Language:
English

References (11)

Method of making a back contacted solar cell patent November 1995
Method for fabricating silicon cells patent August 1998
Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process patent February 1999
High-efficiency solar cell and method for fabrication patent August 1999
Laminated photovoltaic modules using back-contact solar cells patent September 1999
Method of monolithic module assembly patent October 1999
Silicon cells made by self-aligned selective-emitter plasma-etchback process patent July 2000
InGaAsN/GaAs heterojunction for multi-junction solar cells patent June 2001
Die singulation method and package formed thereby patent August 2012
Die singulation method patent June 2013
Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate patent December 2014

Similar Records

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION