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Title: Methods for dry etching semiconductor devices

The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.
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Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
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Resource Relation:
Patent File Date: 2015 Jun 02
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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