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Title: Methods for dry etching semiconductor devices

Abstract

The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1330708
Patent Number(s):
9,484,216
Application Number:
14/728,810
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jun 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bauer, Todd, Gross, Andrew John, Clews, Peggy J., and Olsson, Roy H. Methods for dry etching semiconductor devices. United States: N. p., 2016. Web.
Bauer, Todd, Gross, Andrew John, Clews, Peggy J., & Olsson, Roy H. Methods for dry etching semiconductor devices. United States.
Bauer, Todd, Gross, Andrew John, Clews, Peggy J., and Olsson, Roy H. Tue . "Methods for dry etching semiconductor devices". United States. https://www.osti.gov/servlets/purl/1330708.
@article{osti_1330708,
title = {Methods for dry etching semiconductor devices},
author = {Bauer, Todd and Gross, Andrew John and Clews, Peggy J. and Olsson, Roy H.},
abstractNote = {The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

Patent:

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