Semiconductor devices having a recessed electrode structure
Abstract
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Institute of Technology, Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1182571
- Patent Number(s):
- 9,041,003
- Application Number:
- 13/649,658
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- DOE Contract Number:
- AR0000123
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
Citation Formats
Palacios, Tomas Apostol, Lu, Bin, and Matioli, Elison de Nazareth. Semiconductor devices having a recessed electrode structure. United States: N. p., 2015.
Web.
Palacios, Tomas Apostol, Lu, Bin, & Matioli, Elison de Nazareth. Semiconductor devices having a recessed electrode structure. United States.
Palacios, Tomas Apostol, Lu, Bin, and Matioli, Elison de Nazareth. Tue .
"Semiconductor devices having a recessed electrode structure". United States. https://www.osti.gov/servlets/purl/1182571.
@article{osti_1182571,
title = {Semiconductor devices having a recessed electrode structure},
author = {Palacios, Tomas Apostol and Lu, Bin and Matioli, Elison de Nazareth},
abstractNote = {An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}
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