Lithographic dry development using optical absorption
Abstract
A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1092754
- Patent Number(s):
- 8512937
- Application Number:
- 13/039,139
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Lithographic dry development using optical absorption. United States: N. p., 2013.
Web.
Olynick, Deirdre, Schuck, P. James, & Schmidt, Martin. Lithographic dry development using optical absorption. United States.
Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Tue .
"Lithographic dry development using optical absorption". United States. https://www.osti.gov/servlets/purl/1092754.
@article{osti_1092754,
title = {Lithographic dry development using optical absorption},
author = {Olynick, Deirdre and Schuck, P. James and Schmidt, Martin},
abstractNote = {A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 20 00:00:00 EDT 2013},
month = {Tue Aug 20 00:00:00 EDT 2013}
}
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