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Title: Apparatus and method to measure semiconductor optical absorption using microwave charge sensing

Abstract

A time-resolved microwave reflectance apparatus comprises a pulsed or modulated optical source that irradiates a semiconductor sample with an excitation pump beam, a microwave oscillator that irradiates the sample with a continuous beam of microwaves, and a microwave detector that detects the microwaves reflected by the sample. Therefore, charge detection, rather than conventional absorption measurements (that detect the loss of photons), can be used to extract the absorption coefficient and band edge of a semiconductor material.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1840472
Patent Number(s):
11125700
Application Number:
16/543,891
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/19/2019
Country of Publication:
United States
Language:
English

Citation Formats

Shaner, Eric A., Goldflam, Michael, and Kadlec, Clark N. Apparatus and method to measure semiconductor optical absorption using microwave charge sensing. United States: N. p., 2021. Web.
Shaner, Eric A., Goldflam, Michael, & Kadlec, Clark N. Apparatus and method to measure semiconductor optical absorption using microwave charge sensing. United States.
Shaner, Eric A., Goldflam, Michael, and Kadlec, Clark N. Tue . "Apparatus and method to measure semiconductor optical absorption using microwave charge sensing". United States. https://www.osti.gov/servlets/purl/1840472.
@article{osti_1840472,
title = {Apparatus and method to measure semiconductor optical absorption using microwave charge sensing},
author = {Shaner, Eric A. and Goldflam, Michael and Kadlec, Clark N.},
abstractNote = {A time-resolved microwave reflectance apparatus comprises a pulsed or modulated optical source that irradiates a semiconductor sample with an excitation pump beam, a microwave oscillator that irradiates the sample with a continuous beam of microwaves, and a microwave detector that detects the microwaves reflected by the sample. Therefore, charge detection, rather than conventional absorption measurements (that detect the loss of photons), can be used to extract the absorption coefficient and band edge of a semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {9}
}

Works referenced in this record:

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013


Method and Apparatus for Detecting Surface and Subsurface Properties of Materials
patent-application, October 2008


Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs 1−x Sb x type-II superlattices
journal, December 2016