Die singulation method and package formed thereby
Abstract
A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.
- Inventors:
-
- Tucson, AZ
- Albuquerque, NM
- Tijeras, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1064432
- Patent Number(s):
- 8236611
- Application Number:
- 12/758,833
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, and De Boer, Maarten P. Die singulation method and package formed thereby. United States: N. p., 2012.
Web.
Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, & De Boer, Maarten P. Die singulation method and package formed thereby. United States.
Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, and De Boer, Maarten P. Tue .
"Die singulation method and package formed thereby". United States. https://www.osti.gov/servlets/purl/1064432.
@article{osti_1064432,
title = {Die singulation method and package formed thereby},
author = {Anderson, Robert C and Shul, Randy J and Clews, Peggy J and Baker, Michael S and De Boer, Maarten P},
abstractNote = {A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 07 00:00:00 EDT 2012},
month = {Tue Aug 07 00:00:00 EDT 2012}
}
Works referenced in this record:
Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing
journal, January 2007
- Kumagai, Masayoshi; Uchiyama, Naoki; Ohmura, Etusji
- IEEE Transactions on Semiconductor Manufacturing, Vol. 20, Issue 3