Global to push GA events into
skip to main content

Title: Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.
Inventors:
;
Issue Date:
OSTI Identifier:
1165129
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
Patent Number(s):
8,906,803
Application Number:
14/063,152
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2013 Oct 25
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Similar records in DOepatents and OSTI.GOV collections: