Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

Okandan, Murat; Nielson, Gregory N

Title: Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

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Abstract

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.

Inventors:: Okandan, Murat; Nielson, Gregory N

Issue Date:: 2014-12-09

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1165129

Patent Number(s):: 8906803

Application Number:: 14/063,152

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/76898 - {formed through a semiconductor substrate}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L2224/16145 - the bodies being stacked
H01L21/78 - with subsequent division of the substrate into plural individual devices
H01L2224/16225 - the item being non-metallic, e.g. insulating substrate with or without metallisation

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Oct 25

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats


                    Okandan, Murat, and Nielson, Gregory N. Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate.  United States: N. p., 2014. 
        Web.

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                    Okandan, Murat, & Nielson, Gregory N. Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate.  United States.

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                    Okandan, Murat, and Nielson, Gregory N. Tue .  
        "Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate".  United States.  https://www.osti.gov/servlets/purl/1165129.

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@article{osti_1165129,

  title        = {Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate},

  author       = {Okandan, Murat and Nielson, Gregory N},

  abstractNote = {Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {12}

}

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