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Title: Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

Abstract

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Inventors:
 [1];  [2];  [2]
  1. Lenexa, KS
  2. Manhattan, KS
Issue Date:
Research Org.:
National Science Foundation
Sponsoring Org.:
USDOE
OSTI Identifier:
970387
Patent Number(s):
7,345,812
Application Number:
10/783,972
Assignee:
University of Kansas (Lawrence, KS)
DOE Contract Number:  
FG03-96ER45604
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hui, Rongqing, Jiang, Hong-Xing, and Lin, Jing-Yu. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. United States: N. p., 2008. Web.
Hui, Rongqing, Jiang, Hong-Xing, & Lin, Jing-Yu. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. United States.
Hui, Rongqing, Jiang, Hong-Xing, and Lin, Jing-Yu. Tue . "Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications". United States. https://www.osti.gov/servlets/purl/970387.
@article{osti_970387,
title = {Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications},
author = {Hui, Rongqing and Jiang, Hong-Xing and Lin, Jing-Yu},
abstractNote = {The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {3}
}

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