Title: Methods for improved growth of group III nitride semiconductor compounds

Abstract

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Inventors:

Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

Issue Date:

2015-03-17

Research Org.:

Applied Materials, Inc., Santa Clara, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1172761

Patent Number(s):

8980002

Application Number:

13/469,045

Assignee:

Applied Materials, Inc. (Santa Clara, CA)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/02 - Epitaxial-layer growth
C30B25/14 - Feed and outlet means for the gases
C30B25/18 - characterised by the substrate
C30B25/183 - {being provided with a buffer layer, e.g. a lattice matching layer}
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B29/403 - {AIII-nitrides}
C30B29/406 - {Gallium nitride}

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DOE Contract Number:  

EE0003331

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012 May 10

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY