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Title: Methods for improved growth of group III nitride semiconductor compounds

Abstract

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Inventors:
; ;
Issue Date:
Research Org.:
Applied Materials, Inc., Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1172761
Patent Number(s):
8,980,002
Application Number:
13/469,045
Assignee:
Applied Materials, Inc. (Santa Clara, CA)
DOE Contract Number:  
EE0003331
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 May 10
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Melnik, Yuriy, Chen, Lu, and Kojiri, Hidehiro. Methods for improved growth of group III nitride semiconductor compounds. United States: N. p., 2015. Web.
Melnik, Yuriy, Chen, Lu, & Kojiri, Hidehiro. Methods for improved growth of group III nitride semiconductor compounds. United States.
Melnik, Yuriy, Chen, Lu, and Kojiri, Hidehiro. Tue . "Methods for improved growth of group III nitride semiconductor compounds". United States. https://www.osti.gov/servlets/purl/1172761.
@article{osti_1172761,
title = {Methods for improved growth of group III nitride semiconductor compounds},
author = {Melnik, Yuriy and Chen, Lu and Kojiri, Hidehiro},
abstractNote = {Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

Patent:

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