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Title: Photocell utilizing a wide-bandgap semiconductor material

Abstract

A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

Inventors:
 [1];  [2]
  1. Yardley, PA
  2. Princeton, NJ
Issue Date:
Research Org.:
Solar Energy Research Institute
OSTI Identifier:
865038
Patent Number(s):
4453173
Application Number:
06/372,103
Assignee:
RCA Corporation (New York, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
XG-0-9372-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
photocell; utilizing; wide-bandgap; semiconductor; material; comprises; p-i-n; amorphous; silicon; structure; wide; bandgap; layer; adjacent; p-type; n-type; reduces; absorption; light; entering; back-diffusion; minority; carriers; wide band; cell utilizing; wide bandgap; cell comprises; amorphous silicon; semiconductor material; minority carrier; minority carriers; n-type layer; silicon structure; layer adjacent; light entering; /257/136/

Citation Formats

Carlson, David E, and Williams, Brown F. Photocell utilizing a wide-bandgap semiconductor material. United States: N. p., 1984. Web.
Carlson, David E, & Williams, Brown F. Photocell utilizing a wide-bandgap semiconductor material. United States.
Carlson, David E, and Williams, Brown F. Tue . "Photocell utilizing a wide-bandgap semiconductor material". United States. https://www.osti.gov/servlets/purl/865038.
@article{osti_865038,
title = {Photocell utilizing a wide-bandgap semiconductor material},
author = {Carlson, David E and Williams, Brown F},
abstractNote = {A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {6}
}

Patent:

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