Photocell utilizing a wide-bandgap semiconductor material
Abstract
A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.
- Inventors:
-
- Yardley, PA
- Princeton, NJ
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 865038
- Patent Number(s):
- 4453173
- Application Number:
- 06/372,103
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XG-0-9372-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- photocell; utilizing; wide-bandgap; semiconductor; material; comprises; p-i-n; amorphous; silicon; structure; wide; bandgap; layer; adjacent; p-type; n-type; reduces; absorption; light; entering; back-diffusion; minority; carriers; wide band; cell utilizing; wide bandgap; cell comprises; amorphous silicon; semiconductor material; minority carrier; minority carriers; n-type layer; silicon structure; layer adjacent; light entering; /257/136/
Citation Formats
Carlson, David E, and Williams, Brown F. Photocell utilizing a wide-bandgap semiconductor material. United States: N. p., 1984.
Web.
Carlson, David E, & Williams, Brown F. Photocell utilizing a wide-bandgap semiconductor material. United States.
Carlson, David E, and Williams, Brown F. Tue .
"Photocell utilizing a wide-bandgap semiconductor material". United States. https://www.osti.gov/servlets/purl/865038.
@article{osti_865038,
title = {Photocell utilizing a wide-bandgap semiconductor material},
author = {Carlson, David E and Williams, Brown F},
abstractNote = {A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 05 00:00:00 EDT 1984},
month = {Tue Jun 05 00:00:00 EDT 1984}
}