Method of depositing wide bandgap amorphous semiconductor materials
Abstract
A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.
- Inventors:
-
- (Princeton Junction, NJ)
- Rocky Hill, NJ
- Issue Date:
- OSTI Identifier:
- 866377
- Patent Number(s):
- 4696702
- Application Number:
- 06/933,972
- Assignee:
- Chronar Corp. (Princeton, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XL3031471
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; depositing; wide; bandgap; amorphous; semiconductor; materials; type; substrate; photosensitization; decomposition; gaseous; silanes; presence; p-type; catalytic; dopant; temperature; 200; degree; pressure; range; 1-50; torr; wide band; wide bandgap; semiconductor materials; semiconductor material; amorphous semiconductor; depositing wide; /438/136/427/
Citation Formats
Ellis, Jr., Frank B., and Delahoy, Alan E. Method of depositing wide bandgap amorphous semiconductor materials. United States: N. p., 1987.
Web.
Ellis, Jr., Frank B., & Delahoy, Alan E. Method of depositing wide bandgap amorphous semiconductor materials. United States.
Ellis, Jr., Frank B., and Delahoy, Alan E. Tue .
"Method of depositing wide bandgap amorphous semiconductor materials". United States. https://www.osti.gov/servlets/purl/866377.
@article{osti_866377,
title = {Method of depositing wide bandgap amorphous semiconductor materials},
author = {Ellis, Jr., Frank B. and Delahoy, Alan E},
abstractNote = {A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {9}
}
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