skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of depositing wide bandgap amorphous semiconductor materials

Abstract

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Inventors:
 [1];  [2]
  1. (Princeton Junction, NJ)
  2. (Rocky Hill, NJ)
Issue Date:
OSTI Identifier:
866377
Patent Number(s):
4696702
Application Number:
06/933,972
Assignee:
Chronar Corp. (Princeton, NJ) OSTI
DOE Contract Number:  
XL3031471
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; depositing; wide; bandgap; amorphous; semiconductor; materials; type; substrate; photosensitization; decomposition; gaseous; silanes; presence; p-type; catalytic; dopant; temperature; 200; degree; pressure; range; 1-50; torr; wide band; wide bandgap; semiconductor materials; semiconductor material; amorphous semiconductor; depositing wide; /438/136/427/

Citation Formats

Ellis, Jr., Frank B., and Delahoy, Alan E. Method of depositing wide bandgap amorphous semiconductor materials. United States: N. p., 1987. Web.
Ellis, Jr., Frank B., & Delahoy, Alan E. Method of depositing wide bandgap amorphous semiconductor materials. United States.
Ellis, Jr., Frank B., and Delahoy, Alan E. Tue . "Method of depositing wide bandgap amorphous semiconductor materials". United States. https://www.osti.gov/servlets/purl/866377.
@article{osti_866377,
title = {Method of depositing wide bandgap amorphous semiconductor materials},
author = {Ellis, Jr., Frank B. and Delahoy, Alan E.},
abstractNote = {A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {9}
}

Patent:

Save / Share: