Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
Abstract
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
- Inventors:
-
- Lenexa, KS
- Manhattan, KS
- Issue Date:
- Research Org.:
- National Science Foundation
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 970387
- Patent Number(s):
- 7345812
- Application Number:
- 10/783,972
- Assignee:
- University of Kansas (Lawrence, KS)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- FG03-96ER45604
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Hui, Rongqing, Jiang, Hong-Xing, and Lin, Jing-Yu. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. United States: N. p., 2008.
Web.
Hui, Rongqing, Jiang, Hong-Xing, & Lin, Jing-Yu. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. United States.
Hui, Rongqing, Jiang, Hong-Xing, and Lin, Jing-Yu. Tue .
"Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications". United States. https://www.osti.gov/servlets/purl/970387.
@article{osti_970387,
title = {Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications},
author = {Hui, Rongqing and Jiang, Hong-Xing and Lin, Jing-Yu},
abstractNote = {The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 18 00:00:00 EDT 2008},
month = {Tue Mar 18 00:00:00 EDT 2008}
}
Works referenced in this record:
GaN linear electro‐optic effect
journal, September 1995
- Long, X. ‐C.; Myers, R. A.; Brueck, S. R. J.
- Applied Physics Letters, Vol. 67, Issue 10