Complementary junction heterostructure field-effect transistor
Abstract
A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 170479
- Patent Number(s):
- 5479033
- Application Number:
- PAN: 8-250,088
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 26 Dec 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EFFECT TRANSISTORS; DESIGN; MANUFACTURING; JUNCTION TRANSISTORS; CARRIER MOBILITY; OPTIMIZATION
Citation Formats
Baca, A G, Drummond, T J, Robertson, P J, and Zipperian, T E. Complementary junction heterostructure field-effect transistor. United States: N. p., 1995.
Web.
Baca, A G, Drummond, T J, Robertson, P J, & Zipperian, T E. Complementary junction heterostructure field-effect transistor. United States.
Baca, A G, Drummond, T J, Robertson, P J, and Zipperian, T E. Tue .
"Complementary junction heterostructure field-effect transistor". United States.
@article{osti_170479,
title = {Complementary junction heterostructure field-effect transistor},
author = {Baca, A G and Drummond, T J and Robertson, P J and Zipperian, T E},
abstractNote = {A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 26 00:00:00 EST 1995},
month = {Tue Dec 26 00:00:00 EST 1995}
}
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