skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Gallium nitride junction field-effect transistor

Abstract

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872131
Patent Number(s):
5866925
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
gallium; nitride; junction; field-effect; transistor; all-ion; implanted; gallium-nitride; jfet; method; disclosed; various; implants; n-; p-type; phosphorous; co-implantation; selected; iii-v; semiconductor; materials; field-effect transistor; gallium nitride; semiconductor materials; semiconductor material; effect transistor; iii-v semiconductor; junction field-effect; /257/438/

Citation Formats

Zolper, John C, and Shul, Randy J. Gallium nitride junction field-effect transistor. United States: N. p., 1999. Web.
Zolper, John C, & Shul, Randy J. Gallium nitride junction field-effect transistor. United States.
Zolper, John C, and Shul, Randy J. Fri . "Gallium nitride junction field-effect transistor". United States. https://www.osti.gov/servlets/purl/872131.
@article{osti_872131,
title = {Gallium nitride junction field-effect transistor},
author = {Zolper, John C and Shul, Randy J},
abstractNote = {An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

Patent:

Save / Share:

Works referenced in this record:

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
journal, August 1993


High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
journal, September 1995


Plasma Chemistry Dependent ECR Etching of GaN
journal, January 1995


Microwave performance of GaN MESFETs
journal, July 1994


Ion‐implanted GaN junction field effect transistor
journal, April 1996


Metal semiconductor field effect transistor based on single crystal GaN
journal, April 1993


An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications
journal, July 1994


Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
journal, December 1994


Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994


Ion Implantation For High Performance Ill-V Jfets And Hfets
journal, January 1996


Ion implantation doping and isolation of GaN
journal, September 1995


An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact
journal, July 1994