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Title: Gallium nitride junction field-effect transistor

Abstract

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Inventors:
 [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872131
Patent Number(s):
5866925
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
gallium; nitride; junction; field-effect; transistor; all-ion; implanted; gallium-nitride; jfet; method; disclosed; various; implants; n-; p-type; phosphorous; co-implantation; selected; iii-v; semiconductor; materials; field-effect transistor; gallium nitride; semiconductor materials; semiconductor material; effect transistor; iii-v semiconductor; junction field-effect; /257/438/

Citation Formats

Zolper, John C., and Shul, Randy J. Gallium nitride junction field-effect transistor. United States: N. p., 1999. Web.
Zolper, John C., & Shul, Randy J. Gallium nitride junction field-effect transistor. United States.
Zolper, John C., and Shul, Randy J. Fri . "Gallium nitride junction field-effect transistor". United States. https://www.osti.gov/servlets/purl/872131.
@article{osti_872131,
title = {Gallium nitride junction field-effect transistor},
author = {Zolper, John C. and Shul, Randy J.},
abstractNote = {An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

Patent:

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