Complementary junction heterostructure field-effect transistor

Baca, Albert G; Drummond, Timothy J; Robertson, Perry J; Zipperian, Thomas E

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Title: Complementary junction heterostructure field-effect transistor

Abstract

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Inventors:

Baca, Albert G ^[1]; Drummond, Timothy J ^[1]; Robertson, Perry J ^[1]; Zipperian, Thomas E ^[1]

Albuquerque, NM

Issue Date:: 1995-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870224

Patent Number(s):: 5479033

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/0605 - {integrated circuits made of compound material, e.g. AIIIBV}
H01L29/802 - {with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: complementary; junction; heterostructure; field-effect; transistor; complimentary; pair; compound; semiconductor; transistors; method; manufacture; disclosed; p-channel; strained; layer; split; degeneracy; valence; band; greatly; improved; mobility; speed; n-channel; device; formed; compatible; process; removing; manner; types; independently; optimized; implantation; form; active; isolation; regions; devices; power; high-speed; digital; integrated; circuits; field-effect transistor; integrated circuits; integrated circuit; compound semiconductor; strained layer; effect transistor; semiconductor junction; valence band; field-effect transistors; greatly improved; complimentary pair; junction heterostructure; effect transistors; speed digital; heterostructure field-effect; channel device; /257/

Citation Formats


                    Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, and Zipperian, Thomas E. Complementary junction heterostructure field-effect transistor.  United States: N. p., 1995. 
        Web.

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                    Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, & Zipperian, Thomas E. Complementary junction heterostructure field-effect transistor.  United States.

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                    Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, and Zipperian, Thomas E. Sun .  
        "Complementary junction heterostructure field-effect transistor".  United States.  https://www.osti.gov/servlets/purl/870224.

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@article{osti_870224,

  title        = {Complementary junction heterostructure field-effect transistor},

  author       = {Baca, Albert G and Drummond, Timothy J and Robertson, Perry J and Zipperian, Thomas E},

  abstractNote = {A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1995},

  month        = {1}

}

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Works referenced in this record:

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs
conference, January 1989

Ruden, P. P.; Akinwande, A. I.; Narum, D.
International Technical Digest on Electron Devices Meeting
https://doi.org/10.1109/IEDM.1989.74241

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance
journal, July 1988

Daniels, R. R.; Ruden, P. P.; Shur, M.
IEEE Electron Device Letters, Vol. 9, Issue 7
https://doi.org/10.1109/55.742

The potential of complementary heterostructure FET IC's
journal, December 1987

Kiehl, R. A.; Scontras, M. A.; Widiger, D. J.
IEEE Transactions on Electron Devices, Vol. 34, Issue 12
https://doi.org/10.1109/T-ED.1987.23329

Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI
conference, January 1986

Daniels, R. R.; Mactaggart, R.; Abrokwah, J. K.
1986 International Electron Devices Meeting
https://doi.org/10.1109/IEDM.1986.191216

Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
journal, December 1985

Cirillo, N. C.; Shur, M. S.; Vold, P. J.
IEEE Electron Device Letters, Vol. 6, Issue 12
https://doi.org/10.1109/EDL.1985.26261

Complementary heterostructure insulated gate field effect transistors (HIGFETs)
conference, January 1985

Cirillo, N. C.; Shur, M. S.; Vold, P. J.
1985 International Electron Devices Meeting
https://doi.org/10.1109/IEDM.1985.190962

Double-implanted GaAs complementary JFET's
journal, January 1984

Zuleeg, R.; Notthoff, J. K.; Troeger, G. L.
IEEE Electron Device Letters, Vol. 5, Issue 1
https://doi.org/10.1109/EDL.1984.25817

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
journal, November 1989

Ruden, P. P.; Shur, M.; Arch, D. K.
IEEE Transactions on Electron Devices, Vol. 36, Issue 11
https://doi.org/10.1109/16.43656

Anisotype-gate self-aligned p-channel heterostructure field-effect transistors
journal, January 1993

Abrokwah, J. K.; Huang, J. -H.; Ooms, W. J.
IEEE Transactions on Electron Devices, Vol. 40, Issue 2
https://doi.org/10.1109/16.182501

High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors
journal, March 1987

Chien-Ping Lee, Chien-Ping; Wang, H. T.; Sullivan, G. J.
IEEE Electron Device Letters, Vol. 8, Issue 3, p. 85-87
https://doi.org/10.1109/EDL.1987.26560

Complementary GaAs junction-gated heterostructure field effect transistor technology
conference, January 1994

Baca, A. G.; Zolper, J. C.; Sherwin, M. E.
Proceedings of 1994 IEEE GaAs IC Symposium
https://doi.org/10.1109/GAAS.1994.636920

Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases
journal, January 1985

Mizutani, T.; Fujita, S.; Yanagawa, F.
Electronics Letters, Vol. 21, Issue 23
https://doi.org/10.1049/el:19850793

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Similar Records

Title: Complementary junction heterostructure field-effect transistor

Abstract

Citation Formats

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs conference, January 1989

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance journal, July 1988

The potential of complementary heterostructure FET IC's journal, December 1987

Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI conference, January 1986

Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface journal, December 1985

Complementary heterostructure insulated gate field effect transistors (HIGFETs) conference, January 1985

Double-implanted GaAs complementary JFET's journal, January 1984

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors journal, November 1989

Anisotype-gate self-aligned p-channel heterostructure field-effect transistors journal, January 1993

High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors journal, March 1987

Complementary GaAs junction-gated heterostructure field effect transistor technology conference, January 1994

Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases journal, January 1985

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs
conference, January 1989

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance
journal, July 1988

The potential of complementary heterostructure FET IC's
journal, December 1987

Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI
conference, January 1986

Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
journal, December 1985

Complementary heterostructure insulated gate field effect transistors (HIGFETs)
conference, January 1985

Double-implanted GaAs complementary JFET's
journal, January 1984

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
journal, November 1989

Anisotype-gate self-aligned p-channel heterostructure field-effect transistors
journal, January 1993

High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors
journal, March 1987

Complementary GaAs junction-gated heterostructure field effect transistor technology
conference, January 1994

Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases
journal, January 1985