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Title: Complementary junction heterostructure field-effect transistor

Abstract

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Inventors:
 [1];  [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
870224
Patent Number(s):
5479033
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
complementary; junction; heterostructure; field-effect; transistor; complimentary; pair; compound; semiconductor; transistors; method; manufacture; disclosed; p-channel; strained; layer; split; degeneracy; valence; band; greatly; improved; mobility; speed; n-channel; device; formed; compatible; process; removing; manner; types; independently; optimized; implantation; form; active; isolation; regions; devices; power; high-speed; digital; integrated; circuits; field-effect transistor; integrated circuits; integrated circuit; compound semiconductor; strained layer; effect transistor; semiconductor junction; valence band; field-effect transistors; greatly improved; complimentary pair; junction heterostructure; effect transistors; speed digital; heterostructure field-effect; channel device; /257/

Citation Formats

Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, and Zipperian, Thomas E. Complementary junction heterostructure field-effect transistor. United States: N. p., 1995. Web.
Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, & Zipperian, Thomas E. Complementary junction heterostructure field-effect transistor. United States.
Baca, Albert G, Drummond, Timothy J, Robertson, Perry J, and Zipperian, Thomas E. Sun . "Complementary junction heterostructure field-effect transistor". United States. https://www.osti.gov/servlets/purl/870224.
@article{osti_870224,
title = {Complementary junction heterostructure field-effect transistor},
author = {Baca, Albert G and Drummond, Timothy J and Robertson, Perry J and Zipperian, Thomas E},
abstractNote = {A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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