Complementary junction heterostructure field-effect transistor

Baca, Albert G; Drummond, Timothy J; Robertson, Perry J; Zipperian, Thomas E

Title: Complementary junction heterostructure field-effect transistor

Patent · Sun Jan 01 00:00:00 EST 1995

OSTI ID:870224

Baca, Albert G ^[1]; Drummond, Timothy J ^[1]; Robertson, Perry J ^[1]; Zipperian, Thomas E ^[1]

Albuquerque, NM

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

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Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5479033

OSTI ID:: 870224

Country of Publication:: United States

Language:: English

References (12)

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs Ruden, P. P.; Akinwande, A. I.; Narum, D. International Technical Digest on Electron Devices Meeting https://doi.org/10.1109/IEDM.1989.74241	conference	January 1989
Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance Daniels, R. R.; Ruden, P. P.; Shur, M. IEEE Electron Device Letters, Vol. 9, Issue 7 https://doi.org/10.1109/55.742	journal	July 1988
The potential of complementary heterostructure FET IC's Kiehl, R. A.; Scontras, M. A.; Widiger, D. J. IEEE Transactions on Electron Devices, Vol. 34, Issue 12 https://doi.org/10.1109/T-ED.1987.23329	journal	December 1987
Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI Daniels, R. R.; Mactaggart, R.; Abrokwah, J. K. 1986 International Electron Devices Meeting https://doi.org/10.1109/IEDM.1986.191216	conference	January 1986
Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface Cirillo, N. C.; Shur, M. S.; Vold, P. J. IEEE Electron Device Letters, Vol. 6, Issue 12 https://doi.org/10.1109/EDL.1985.26261	journal	December 1985
Complementary heterostructure insulated gate field effect transistors (HIGFETs) Cirillo, N. C.; Shur, M. S.; Vold, P. J. 1985 International Electron Devices Meeting https://doi.org/10.1109/IEDM.1985.190962	conference	January 1985
Double-implanted GaAs complementary JFET's Zuleeg, R.; Notthoff, J. K.; Troeger, G. L. IEEE Electron Device Letters, Vol. 5, Issue 1 https://doi.org/10.1109/EDL.1984.25817	journal	January 1984
Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors Ruden, P. P.; Shur, M.; Arch, D. K. IEEE Transactions on Electron Devices, Vol. 36, Issue 11 https://doi.org/10.1109/16.43656	journal	November 1989
Anisotype-gate self-aligned p-channel heterostructure field-effect transistors Abrokwah, J. K.; Huang, J. -H.; Ooms, W. J. IEEE Transactions on Electron Devices, Vol. 40, Issue 2 https://doi.org/10.1109/16.182501	journal	January 1993
High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors Chien-Ping Lee, Chien-Ping; Wang, H. T.; Sullivan, G. J. IEEE Electron Device Letters, Vol. 8, Issue 3, p. 85-87 https://doi.org/10.1109/EDL.1987.26560	journal	March 1987
Complementary GaAs junction-gated heterostructure field effect transistor technology Baca, A. G.; Zolper, J. C.; Sherwin, M. E. Proceedings of 1994 IEEE GaAs IC Symposium https://doi.org/10.1109/GAAS.1994.636920	conference	January 1994
Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases Mizutani, T.; Fujita, S.; Yanagawa, F. Electronics Letters, Vol. 21, Issue 23 https://doi.org/10.1049/el:19850793	journal	January 1985

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Title: Complementary junction heterostructure field-effect transistor

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