Gallium nitride junction field-effect transistor

Zolper, J C; Shul, R J

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Title: Gallium nitride junction field-effect transistor

Abstract

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Inventors:: Zolper, J C; Shul, R J

Issue Date:: 1999-02-02

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 321296

Patent Number(s):: 5866925

Application Number:: PAN: 8-781,068

Assignee:: Sandia Corp., Albuquerque, NM (United States)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 2 Feb 1999

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ION IMPLANTATION; GALLIUM NITRIDES; FIELD EFFECT TRANSISTORS; FABRICATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHORUS IONS

Citation Formats


                    Zolper, J C, and Shul, R J. Gallium nitride junction field-effect transistor.  United States: N. p., 1999. 
        Web.

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                    Zolper, J C, & Shul, R J. Gallium nitride junction field-effect transistor.  United States.

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                    Zolper, J C, and Shul, R J. Tue .  
        "Gallium nitride junction field-effect transistor".  United States.

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@article{osti_321296,

  title        = {Gallium nitride junction field-effect transistor},

  author       = {Zolper, J C and Shul, R J},

  abstractNote = {An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1999},

  month        = {2}

}

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Works referenced in this record:

High electron mobility transistor based on a GaN‐Al_xGa _1−xN heterojunction
journal, August 1993

Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.
Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215
https://doi.org/10.1063/1.109775

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
journal, September 1995

Yuan, C.; Salagaj, T.; Gurary, A.
Journal of The Electrochemical Society, Vol. 142, Issue 9
https://doi.org/10.1149/1.2048735

Plasma Chemistry Dependent ECR Etching of GaN
journal, January 1995

Shul, R. J.; Ashby, C. I. H.; Rieger, D. J.
MRS Proceedings, Vol. 395
https://doi.org/10.1557/PROC-395-751

Microwave performance of GaN MESFETs
journal, July 1994

Rowland, L. B.; Kelner, G.; Gaskill, D. K.
Electronics Letters, Vol. 30, Issue 15
https://doi.org/10.1049/el:19940833

Ion‐implanted GaN junction field effect transistor
journal, April 1996

Zolper, J. C.; Shul, R. J.; Baca, A. G.
Applied Physics Letters, Vol. 68, Issue 16
https://doi.org/10.1063/1.115882

Metal semiconductor field effect transistor based on single crystal GaN
journal, April 1993

Asif Khan, M.; Kuznia, J. N.; Bhattarai, A. R.
Applied Physics Letters, Vol. 62, Issue 15
https://doi.org/10.1063/1.109549

An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications
journal, July 1994

Sherwin, M. E.; Zolper, J. C.; Baca, A. G.
IEEE Electron Device Letters, Vol. 15, Issue 7
https://doi.org/10.1109/55.294083

Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
journal, December 1994

Zolper, J. C.; Shenvin, M. E.; Baca, A. G.
IEEE Electron Device Letters, Vol. 15, Issue 12
https://doi.org/10.1109/55.338414

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994

Morkoç, H.; Strite, S.; Gao, G. B.
Journal of Applied Physics, Vol. 76, Issue 3
https://doi.org/10.1063/1.358463

P- and N-type implantation doping of GaN with Ca and O
report, May 1996

Zolper, J. C.; Wilson, R. G.; Pearton, S. J.
https://doi.org/10.2172/238549

Ion Implantation For High Performance Ill-V Jfets And Hfets
journal, January 1996

Zolper, J. C.; Baca, A. G.; Sherwin, M. E.
MRS Proceedings, Vol. 421
https://doi.org/10.1557/PROC-421-209

Ion implantation doping and isolation of GaN
journal, September 1995

Pearton, S. J.; Vartuli, C. B.; Zolper, J. C.
Applied Physics Letters, Vol. 67, Issue 10
https://doi.org/10.1063/1.114518

An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact
journal, July 1994

Zolper, J. C.; Baca, A. G.; Shul, R. J.
IEEE Transactions on Electron Devices, Vol. 41, Issue 7
https://doi.org/10.1109/16.293333

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Similar Records

Title: Gallium nitride junction field-effect transistor

Abstract

Citation Formats

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction journal, August 1993

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor journal, September 1995

Plasma Chemistry Dependent ECR Etching of GaN journal, January 1995

Microwave performance of GaN MESFETs journal, July 1994

Ion‐implanted GaN junction field effect transistor journal, April 1996

Metal semiconductor field effect transistor based on single crystal GaN journal, April 1993

An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications journal, July 1994

Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant journal, December 1994

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies journal, August 1994

P- and N-type implantation doping of GaN with Ca and O report, May 1996

Ion Implantation For High Performance Ill-V Jfets And Hfets journal, January 1996

Ion implantation doping and isolation of GaN journal, September 1995

An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact journal, July 1994

High electron mobility transistor based on a GaN‐Al_xGa _1−xN heterojunction
journal, August 1993

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
journal, September 1995

Plasma Chemistry Dependent ECR Etching of GaN
journal, January 1995

Microwave performance of GaN MESFETs
journal, July 1994

Ion‐implanted GaN junction field effect transistor
journal, April 1996

Metal semiconductor field effect transistor based on single crystal GaN
journal, April 1993

An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications
journal, July 1994

Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
journal, December 1994

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994

P- and N-type implantation doping of GaN with Ca and O
report, May 1996

Ion Implantation For High Performance Ill-V Jfets And Hfets
journal, January 1996

Ion implantation doping and isolation of GaN
journal, September 1995

An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact
journal, July 1994