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Title: Method for forming perovskite layers using atmospheric pressure plasma

Abstract

Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.

Inventors:
; ; ;
Issue Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650830
Patent Number(s):
10636632
Application Number:
15/874,527
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
EE0004946
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/18/2018
Country of Publication:
United States
Language:
English

Citation Formats

Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, and Dauskardt, Reinhold H.. Method for forming perovskite layers using atmospheric pressure plasma. United States: N. p., 2020. Web.
Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, & Dauskardt, Reinhold H.. Method for forming perovskite layers using atmospheric pressure plasma. United States.
Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, and Dauskardt, Reinhold H.. Tue . "Method for forming perovskite layers using atmospheric pressure plasma". United States. https://www.osti.gov/servlets/purl/1650830.
@article{osti_1650830,
title = {Method for forming perovskite layers using atmospheric pressure plasma},
author = {Hilt, Florian and Hovish, Michael Q. and Rolston, Nicholas and Dauskardt, Reinhold H.},
abstractNote = {Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}

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