Method for forming perovskite layers using atmospheric pressure plasma
Abstract
Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
- Inventors:
- Issue Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1650830
- Patent Number(s):
- 10636632
- Application Number:
- 15/874,527
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EE0004946
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 01/18/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, and Dauskardt, Reinhold H. Method for forming perovskite layers using atmospheric pressure plasma. United States: N. p., 2020.
Web.
Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, & Dauskardt, Reinhold H. Method for forming perovskite layers using atmospheric pressure plasma. United States.
Hilt, Florian, Hovish, Michael Q., Rolston, Nicholas, and Dauskardt, Reinhold H. Tue .
"Method for forming perovskite layers using atmospheric pressure plasma". United States. https://www.osti.gov/servlets/purl/1650830.
@article{osti_1650830,
title = {Method for forming perovskite layers using atmospheric pressure plasma},
author = {Hilt, Florian and Hovish, Michael Q. and Rolston, Nicholas and Dauskardt, Reinhold H.},
abstractNote = {Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}
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