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Title: Process for forming epitaxial perovskite thin film layers using halide precursors

Abstract

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Inventors:
 [1];  [1];  [2];  [1]
  1. Albuquerque, NM
  2. Corrales, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873727
Patent Number(s):
6231666
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; epitaxial; perovskite; film; layers; halide; precursors; perovskite-phase; substrate; buffer; layer; yba; cu; 7-x; superconductor; utilizes; alkali; alkaline; metal; acetates; dissolved; halogenated; organic; acid; titanium; isopropoxide; dip; spin-coat; heated; 700; degree; inert; gas; atmosphere; form; ybco; deposited; formed; film layers; layer formed; process utilizes; buffer layer; inert gas; gas atmosphere; film layer; organic acid; halogenated organic; epitaxial film; utilizes alkali; ybco superconductor; forming epitaxial; metal acetate; superconductor layer; /117/

Citation Formats

Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors. United States: N. p., 2001. Web.
Clem, Paul G, Rodriguez, Mark A, Voigt, James A, & Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors. United States.
Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Mon . "Process for forming epitaxial perovskite thin film layers using halide precursors". United States. https://www.osti.gov/servlets/purl/873727.
@article{osti_873727,
title = {Process for forming epitaxial perovskite thin film layers using halide precursors},
author = {Clem, Paul G and Rodriguez, Mark A and Voigt, James A and Ashley, Carol S},
abstractNote = {A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Works referenced in this record:

Metalorganic deposition of high‐ J c Ba 2 YCu 3 O 7− x thin films from trifluoroacetate precursors onto (100) SrTiO 3
journal, October 1990


Heteroepitaxial growth of chemically derived ex situ Ba 2 YCu 3 O 7− x thin films
journal, September 1994


Epitaxial nucleation and growth of chemically derived Ba 2 YCu 3 O 7− x thin films on (001) SrTiO 3
journal, May 1995


Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba 2 YCu 3 O 7− x on (001) LaAlO 3
journal, February 1992