Title: Tunnel barrier schottky

Abstract

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Inventors:

Chu, Rongming; Cao, Yu; Li, Zijian; Williams, Adam J.

Issue Date:

2018-11-20

Research Org.:

HRL Laboratories, LLC, Malibu, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1494135

Patent Number(s):

10134851

Application Number:

15/842,002

Assignee:

HRL Laboratories, LLC (Malibu, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/2003 - {Nitride compounds}
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/36 - characterised by the concentration or distribution of impurities {in the bulk material
H01L29/47 - Schottky barrier electrodes {
H01L29/66212 - {Schottky diodes}
H01L29/66219 - {with a heterojunction, e.g. resonant tunneling diodes [RTD]}
H01L29/872 - Schottky diodes
H01L29/88 - Tunnel-effect diodes

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DOE Contract Number:  

AR0000450

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Dec 14

Country of Publication:

United States

Language:

English

Subject:

25 ENERGY STORAGE