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Title: Process for preparing schottky diode contacts with predetermined barrier heights

A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.
Inventors:
 [1];  [2];  [3]
  1. (Middleton, WI)
  2. (Portland, OR)
  3. (Madison, WI)
Issue Date:
OSTI Identifier:
870414
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
Patent Number(s):
US 5516725
Contract Number:
FG02-86ER45274
Research Org:
University of Wisconsin
Country of Publication:
United States
Language:
English
Subject:
process; preparing; schottky; diode; contacts; predetermined; barrier; heights; provided; producing; preselected; height; phi; bn; substrate; preferably; n-gaas; metallic; contact; derived; starting; alloy; formula; sigma; delta; 1-x; moiety; consists; viii; metal; selected; consisting; nickel; cobalt; ruthenium; rhodium; indium; platinum; stoichiometric; coefficient; total; value; positive; ranges; capable; forming; phase; equilibrium; reciprocal; binary; mixture; ga-; al-alas-gaas; subclass; preliminarily; correlated; producable; therewith; diodes; sputtering; annealing; product; produced; according; produced according; viii metal; metal selected; schottky diode; barrier height; metallic contact; /438/

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