Global to push GA events into
skip to main content

Title: Process for preparing schottky diode contacts with predetermined barrier heights

A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [ ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [ ]Ga-[ ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.
 [1];  [2];  [3]
  1. (Middleton, WI)
  2. (Portland, OR)
  3. (Madison, WI)
Issue Date:
OSTI Identifier:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
Patent Number(s):
US 5516725
Contract Number:
Research Org:
University of Wisconsin
Country of Publication:
United States
process; preparing; schottky; diode; contacts; predetermined; barrier; heights; provided; producing; preselected; height; phi; bn; substrate; preferably; n-gaas; metallic; contact; derived; starting; alloy; formula; sigma; delta; 1-x; moiety; consists; viii; metal; selected; consisting; nickel; cobalt; ruthenium; rhodium; indium; platinum; stoichiometric; coefficient; total; value; positive; ranges; capable; forming; phase; equilibrium; reciprocal; binary; mixture; ga-; al-alas-gaas; subclass; preliminarily; correlated; producable; therewith; diodes; sputtering; annealing; product; produced; according; produced according; viii metal; metal selected; schottky diode; barrier height; metallic contact; /438/