Process for preparing schottky diode contacts with predetermined barrier heights

Chang, Y Austin; Jan, Chia-Hong; Chen, Chia-Ping

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Title: Process for preparing schottky diode contacts with predetermined barrier heights

Abstract

A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

Inventors:

Chang, Y Austin ^[1]; Jan, Chia-Hong ^[2]; Chen, Chia-Ping ^[3]

Middleton, WI
Portland, OR
Madison, WI

Issue Date:: 1996-01-01

Research Org.:: Univ. of Wisconsin, Madison, WI (United States)

OSTI Identifier:: 870414

Patent Number(s):: 5516725

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):: C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C22C19/00 - Alloys based on nickel or cobalt
C22C5/04 - Alloys based on a platinum group metal

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/185 - {by cathodic sputtering}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/475 - {on AIII-BV compounds}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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DOE Contract Number:: FG02-86ER45274

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; preparing; schottky; diode; contacts; predetermined; barrier; heights; provided; producing; preselected; height; phi; bn; substrate; preferably; n-gaas; metallic; contact; derived; starting; alloy; formula; sigma; delta; 1-x; moiety; consists; viii; metal; selected; consisting; nickel; cobalt; ruthenium; rhodium; indium; platinum; stoichiometric; coefficient; total; value; positive; ranges; capable; forming; phase; equilibrium; reciprocal; binary; mixture; ga-; al-alas-gaas; subclass; preliminarily; correlated; producable; therewith; diodes; sputtering; annealing; product; produced; according; produced according; viii metal; metal selected; schottky diode; barrier height; metallic contact; /438/

Citation Formats


                    Chang, Y Austin, Jan, Chia-Hong, and Chen, Chia-Ping. Process for preparing schottky diode contacts with predetermined barrier heights.  United States: N. p., 1996. 
        Web.

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                    Chang, Y Austin, Jan, Chia-Hong, & Chen, Chia-Ping. Process for preparing schottky diode contacts with predetermined barrier heights.  United States.

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                    Chang, Y Austin, Jan, Chia-Hong, and Chen, Chia-Ping. Mon .  
        "Process for preparing schottky diode contacts with predetermined barrier heights".  United States.  https://www.osti.gov/servlets/purl/870414.

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@article{osti_870414,

  title        = {Process for preparing schottky diode contacts with predetermined barrier heights},

  author       = {Chang, Y Austin and Jan, Chia-Hong and Chen, Chia-Ping},

  abstractNote = {A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {1}

}

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Works referenced in this record:

A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts
journal, January 1992

Chen, C-P.; Jan, C-H.; Chang, Y. A.
MRS Proceedings, Vol. 281
https://doi.org/10.1557/PROC-281-683

Hybridised sol-gel process for optical fibres
journal, January 1987

MacChesney, J. B.; Johnson, D. W.; Fleming, D. A.
Electronics Letters, Vol. 23, Issue 19
https://doi.org/10.1049/el:19870705

Reactions of (100) Multilayered Metal Structures Containing Fe Grown on (100) Si
journal, January 1992

Chang, Chin-An; Coleman, Grant
MRS Proceedings, Vol. 260
https://doi.org/10.1557/PROC-260-581

Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors
journal, January 1988

Sands, T.
Applied Physics Letters, Vol. 52, Issue 3
https://doi.org/10.1063/1.99518

Epitaxial growth of GaAs/NiAl/GaAs heterostructures
journal, April 1988

Sands, T.; Harbison, J. P.; Chan, W. K.
Applied Physics Letters, Vol. 52, Issue 15
https://doi.org/10.1063/1.99162

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system
journal, February 1989

Guivarc'h, A.; Caulet, J.; Guenais, B.
Journal of Crystal Growth, Vol. 95, Issue 1-4
https://doi.org/10.1016/0022-0248(89)90435-1

NiAl/ n ‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing
journal, April 1988

Sands, T.; Chan, W. K.; Chang, C. C.
Applied Physics Letters, Vol. 52, Issue 16
https://doi.org/10.1063/1.99152

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Title: Process for preparing schottky diode contacts with predetermined barrier heights

Abstract

Citation Formats

A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts journal, January 1992

Hybridised sol-gel process for optical fibres journal, January 1987

Reactions of (100) Multilayered Metal Structures Containing Fe Grown on (100) Si journal, January 1992

Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors journal, January 1988

Epitaxial growth of GaAs/NiAl/GaAs heterostructures journal, April 1988

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system journal, February 1989

NiAl/ n ‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing journal, April 1988

A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts
journal, January 1992

Hybridised sol-gel process for optical fibres
journal, January 1987

Reactions of (100) Multilayered Metal Structures Containing Fe Grown on (100) Si
journal, January 1992

Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors
journal, January 1988

Epitaxial growth of GaAs/NiAl/GaAs heterostructures
journal, April 1988

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system
journal, February 1989

NiAl/ n ‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing
journal, April 1988