Preparation of cuxinygazsen precursor films and powders by electroless deposition

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872627

Bhattacharya, Raghu N ^[1]; Batchelor, Wendi Kay ^[2]; Wiesner, Holm ^[3]; Ramanathan, Kannan ^[3]; Noufi, Rommel ^[3]

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1. Littleton, CO
2. Lakewood, CO
3. Golden, CO

A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5976614
• OSTI ID: 872627
• Country of Publication: United States
• Language: English

Related Subjects

preparation
cuxinygazsen
precursor
films
powders
electroless
deposition
method
cu
z
0-2
0-3
metallic
substrate
comprising
preparing
aqueous
bath
solution
compounds
selected
consisting
copper
compound
selenium
indium
gallium
ii
iii
sufficient
quantity
react
produce
adjusting
ph
acidic
value
addition
dilute
acid
initiating
reaction
oxidizing
counterelectrode
time
deposit
substrate comprising
precursor film
selenium compound
precursor films
dilute acid
sufficient time
electroless deposition
metallic substrate
sufficient quantity
produce cu
bath solution
rate comprising
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